Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

被引：0
|
作者：
Indutnyy, I. Z. [1 ]
Lysenko, V. S. [1 ]
Maidanchuk, I. Yu. [1 ]
Min'ko, V. I. [1 ]
Nazarov, A. N. [1 ]
Tkachenko, A. S. [1 ]
Shepeliavyi, P. E. [1 ]
Dan'ko, V. A. [1 ]
机构：
[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2006年 / 9卷 / 01期
关键词：
nanocrystals; silicon oxide; photoluminescence; thin film;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO2 layers is shown.
引用
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页码：9 / 13
页数：5
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