PREPARATION AND SOME PHYSICAL-PROPERTIES OF BI2-XINXSE3 SINGLE-CRYSTALS

Bi2-xInxSe3 (x=0.00 to 0.66) single crystals were prepared using a modified Bridgmann method. Their homogeneity was studied by determining the indium content and the variations of Seebeck coefficient in the directions perpendicular and parallel to the crystal axis. X-ray structure analysis revealed that the volume of the unit cell of Bi2-xInxSe3 crystal lattice decreases with increasing value of x. Measurements of the electrical conductivity, Hall constant and Seebeck coefficient showed that incorporation of the indium atoms into the Bi2Se3 crystal lattice results in an increase of free electron concentration for low indium content, whereas the free electron concentration is suppressed in the range of the high indium content. This effect is explained qualitatively on the basis of our ideas on the nature of point defects in Bi2-xInxSe3 crystals. © 1990 Chapman and Hall Ltd.