DEEP IMPURITIES IN SEMICONDUCTORS .1. EVANESCENT STATES AND COMPLEX BAND-STRUCTURE

被引：19
作者：
INKSON, JC
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 03期
关键词：
D O I：
10.1088/0022-3719/13/3/012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：369 / 381
页数：13
相关论文
共 18 条
[1]   SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228
[2]  
BERNHOLC J, 1978, PHYS REV B, V18
[3]  
BLOW K, 1980, J PHYS C, V13
[4]  
BOIS D, 1978, P INT C PHYS SEMICON, P295
[5]   STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J].
BURT, MG ;
INKSON, JC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :43-53
[6]  
BURT MG, 1980, J PHYS C, V13
[7]  
CALLAWAY J, 1967, PHYS REV, V164, P1043, DOI 10.1103/PhysRev.164.1043
[8]   LOCALIZED DEFECTS IN SEMICONDUCTORS [J].
CALLAWAY, J ;
HUGHES, AJ .
PHYSICAL REVIEW, 1967, 156 (03) :860-+
[9]  
EAVES L, UNPUBLISHED
[10]   ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J].
HEINE, V .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520) :300-&
12