DEEP IMPURITIES IN SEMICONDUCTORS .1. EVANESCENT STATES AND COMPLEX BAND-STRUCTURE

[1] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (05) : 225 - 228

[2] BERNHOLC J, 1978, PHYS REV B, V18

[3] BLOW K, 1980, J PHYS C, V13

[4] BOIS D, 1978, P INT C PHYS SEMICON, P295

[5] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) : 43 - 53

[6] BURT MG, 1980, J PHYS C, V13

[7] CALLAWAY J, 1967, PHYS REV, V164, P1043, DOI 10.1103/PhysRev.164.1043

[8] LOCALIZED DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +

[9] EAVES L, UNPUBLISHED

[10] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520): : 300 - &

[1] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (05) : 225 - 228

[2] BERNHOLC J, 1978, PHYS REV B, V18

[3] BLOW K, 1980, J PHYS C, V13

[4] BOIS D, 1978, P INT C PHYS SEMICON, P295

[5] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) : 43 - 53

[6] BURT MG, 1980, J PHYS C, V13

[7] CALLAWAY J, 1967, PHYS REV, V164, P1043, DOI 10.1103/PhysRev.164.1043

[8] LOCALIZED DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +

[9] EAVES L, UNPUBLISHED

[10] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520): : 300 - &