ROLE OF EDGE CAPACITANCE IN DESIGN OF MICROWAVE SCHOTTKY-BARRIER DETECTOR DIODES

被引:0
作者
DAY, HM
GLEASON, KR
MACPHERSON, AC
机构
关键词
D O I
10.1016/0038-1101(70)90108-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1111 / +
页数:1
相关论文
共 50 条
[31]   DIODES WITH SCHOTTKY-BARRIER UNDER UNIFORM PRESSURE [J].
VILISOV, AA ;
FILONOV, NG .
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (02) :146-148
[32]   A BURNOUT CRITERION FOR SCHOTTKY-BARRIER MIXER DIODES [J].
ANAND, Y ;
HOWELL, C .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11) :2098-&
[33]   DOWN CONVERSION BY MEANS OF SCHOTTKY-BARRIER DIODES [J].
BUCHS, JD .
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1972, 25 (07) :305-+
[34]   TUNGSTEN-SEMICONDUCTOR SCHOTTKY-BARRIER DIODES [J].
CROWELL, CR ;
SARACE, JC ;
SZE, SM .
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (03) :478-&
[35]   ON THE CONTRIBUTION OF RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES [J].
WOODS, NJ ;
HALL, S .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) :2295-2297
[36]   INTERFACES AND RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES [J].
LADBROOKE, PH .
SOLID-STATE ELECTRONICS, 1972, 15 (01) :139-+
[37]   Investigation of the Parameters of Schottky-Barrier Diodes. [J].
Wosinski, Tadeusz ;
Jelenski, Andrzej .
Elektronika, 1975, 16 (05) :195-198
[38]   SUBMILLIMETER DETECTORS USING SCHOTTKY-BARRIER DIODES [J].
AVERIN, SV ;
POPOV, VA .
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (05) :1057-1061
[39]   HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES [J].
ITO, K .
SURFACE SCIENCE, 1979, 86 (JUL) :345-352
[40]   THERMALLY OXIDIZED MESA SCHOTTKY-BARRIER DIODES [J].
GUTKNECHT, P ;
STRUTT, MJO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) :172-173