ROLE OF EDGE CAPACITANCE IN DESIGN OF MICROWAVE SCHOTTKY-BARRIER DETECTOR DIODES

被引:0
作者
DAY, HM
GLEASON, KR
MACPHERSON, AC
机构
关键词
D O I
10.1016/0038-1101(70)90108-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1111 / +
页数:1
相关论文
共 50 条
[21]   BARRIER HEIGHT OF TITANIUM SILICIDE SCHOTTKY-BARRIER DIODES [J].
KIKUCHI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11) :L894-L895
[22]   CAPACITANCE OF LARGE BARRIER SCHOTTKY DIODES [J].
GREEN, MA .
SOLID-STATE ELECTRONICS, 1976, 19 (05) :421-422
[23]   SCHOTTKY-BARRIER DIODES AND HETERODYNE-DETECTION [J].
MCCOLL, M .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1977, 67 (10) :1431-1431
[24]   THEORY OF A MICROWAVE-SIGNAL DETECTOR EMPLOYING A SCHOTTKY-BARRIER DIODE. [J].
Garb, Kh.L. ;
Fel, L.G. .
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1980, 25 (09) :110-118
[25]   CUTOFF FREQUENCY OF SUBMILLIMETER SCHOTTKY-BARRIER DIODES [J].
CHAMPLIN, KS ;
EISENSTEIN, G .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (01) :31-34
[26]   INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES [J].
WU, CY .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3786-3789
[27]   NEW TECHNIQUE FOR FABRICATION OF SCHOTTKY-BARRIER DIODES [J].
STAREEV, GD ;
PISKORSKI, MM .
SOLID-STATE ELECTRONICS, 1977, 20 (02) :161-163
[28]   CONVERSION LOSSES IN GAAS SCHOTTKY-BARRIER DIODES [J].
VONROOS, O ;
WANG, KL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (01) :183-187
[29]   Planar Schottky diodes with low barrier height for microwave detector application [J].
Shashkin, V ;
Chechenin, Y ;
Danil'tsev, V ;
Khrykin, O ;
Maslovsky, A ;
Murel, A ;
Vaks, V .
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, :335-338
[30]   ON THE CONTRIBUTION OF RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES [J].
WOODS, NJ ;
HALL, S .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) :2295-2297