首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
ROLE OF EDGE CAPACITANCE IN DESIGN OF MICROWAVE SCHOTTKY-BARRIER DETECTOR DIODES
被引:0
|
作者
:
DAY, HM
论文数:
0
引用数:
0
h-index:
0
DAY, HM
GLEASON, KR
论文数:
0
引用数:
0
h-index:
0
GLEASON, KR
MACPHERSON, AC
论文数:
0
引用数:
0
h-index:
0
MACPHERSON, AC
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1970年
/ 13卷
/ 07期
关键词
:
D O I
:
10.1016/0038-1101(70)90108-5
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1111 / +
页数:1
相关论文
共 50 条
[1]
EDGE CAPACITANCE EFFECTS ON SCHOTTKY BARRIER MICROWAVE DIODES
DAY, HM
论文数:
0
引用数:
0
h-index:
0
DAY, HM
GLEASON, KR
论文数:
0
引用数:
0
h-index:
0
GLEASON, KR
REPORT OF NRL PROGRESS,
1969,
(JUL):
: 17
-
&
[2]
SCHOTTKY-BARRIER DIODES
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS,
1972,
5
(10):
: 958
-
&
[3]
CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
BEICHLER, J
论文数:
0
引用数:
0
h-index:
0
BEICHLER, J
FUHS, W
论文数:
0
引用数:
0
h-index:
0
FUHS, W
MELL, H
论文数:
0
引用数:
0
h-index:
0
MELL, H
WELSCH, HM
论文数:
0
引用数:
0
h-index:
0
WELSCH, HM
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1980,
35-6
(JAN-)
: 587
-
592
[4]
BREAKDOWN AND CAPACITANCE PROPERTIES OF HYPERABRUPT EPITAXIAL SCHOTTKY-BARRIER DIODES
KUMAR, R
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
KUMAR, R
JINDAL, S
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
JINDAL, S
BHATTACHARYYA, AB
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
INDIAN INST TECHNOL, SCH RADAR STUDIES, DEPT ELECT ENGN, NEW DELHI 110029, INDIA
BHATTACHARYYA, AB
SOLID-STATE ELECTRONICS,
1975,
18
(11)
: 999
-
1002
[5]
DESIGN CONSIDERATIONS FOR PLANAR SCHOTTKY-BARRIER DIODES
KELLNER, W
论文数:
0
引用数:
0
h-index:
0
KELLNER, W
ENDERS, N
论文数:
0
引用数:
0
h-index:
0
ENDERS, N
RISTOW, D
论文数:
0
引用数:
0
h-index:
0
RISTOW, D
KNIEPKAMP, H
论文数:
0
引用数:
0
h-index:
0
KNIEPKAMP, H
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 9
-
&
[6]
DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
JOURNAL OF APPLIED PHYSICS,
1966,
37
(08)
: 3024
-
&
[7]
ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
EGLASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
EGLASH, SJ
NEWMAN, N
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
NEWMAN, N
PAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PAN, S
MO, D
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
MO, D
SHENAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SHENAI, K
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
PONCE, FA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
PONCE, FA
COLLINS, DM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
COLLINS, DM
JOURNAL OF APPLIED PHYSICS,
1987,
61
(11)
: 5159
-
5169
[8]
COMMENT ON ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
HORVATH, ZJ
论文数:
0
引用数:
0
h-index:
0
HORVATH, ZJ
JOURNAL OF APPLIED PHYSICS,
1988,
64
(01)
: 443
-
444
[9]
THE CAPACITANCE OF RF SPUTTERED HYDROGENATED AMORPHOUS-SILICON, SCHOTTKY-BARRIER DIODES
FERNANDEZCANQUE, HL
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
FERNANDEZCANQUE, HL
ALLISON, J
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
ALLISON, J
THOMPSON, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
THOMPSON, MJ
JOURNAL OF APPLIED PHYSICS,
1983,
54
(12)
: 7025
-
7033
[10]
FREQUENCY-DEPENDENCE OF FORWARD CAPACITANCE VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES
CHATTOPADHYAY, P
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic Science, University College of Science and Technology, Calcutta, 700 009
CHATTOPADHYAY, P
RAYCHAUDHURI, B
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic Science, University College of Science and Technology, Calcutta, 700 009
RAYCHAUDHURI, B
SOLID-STATE ELECTRONICS,
1993,
36
(04)
: 605
-
610
←
1
2
3
4
5
→