STUDY OF THE SIO2/SI INTERFACE ENDURANCE PROPERTY DURING RAPID THERMAL NITRIDATION AND REOXIDATION PROCESSING

被引：26

作者：

SHIH, DK ^{[1
]}

KWONG, DL ^{[1
]}

LEE, S ^{[1
]}

机构：

[1] NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.101556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：822 / 824

页数：3

共 16 条

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[8] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J].

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[9] STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES [J].

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[10]

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