DC AND AC CHARACTERISTICS OF DELTA-DOPED GAAS-FET

[1] CUNNINGHAM ESJ, 1986, APPL PHYS LETT, V40, P1729

[2] EXPERIMENTAL AND THEORETICAL MOBILITY OF ELECTRONS IN DELTA-DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 972 - 974

[3] HONG WP, 1988, 15TH INT S GAAS REL

[4] ELECTRON CONDUCTION IN GAAS ATOMIC LAYER DOPED WITH SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 5023 - 5026

[5] PLOOG M, 1988, I PHYS C, V91, P27

[6] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (07) : 591 - 594

[7] ZRENNER A, 1988, I PHYS C SER, V91, P171

[1] CUNNINGHAM ESJ, 1986, APPL PHYS LETT, V40, P1729

[2] EXPERIMENTAL AND THEORETICAL MOBILITY OF ELECTRONS IN DELTA-DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 972 - 974

[3] HONG WP, 1988, 15TH INT S GAAS REL

[4] ELECTRON CONDUCTION IN GAAS ATOMIC LAYER DOPED WITH SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 5023 - 5026

[5] PLOOG M, 1988, I PHYS C, V91, P27

[6] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (07) : 591 - 594

[7] ZRENNER A, 1988, I PHYS C SER, V91, P171