DC AND AC CHARACTERISTICS OF DELTA-DOPED GAAS-FET

被引：45
作者：
HONG, WP
HARBISON, J
FLOREZ, L
ABELES, JH
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期
关键词：
D O I：
10.1109/55.29662
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：310 / 312
页数：3
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