CURRENT-VOLTAGE CHARACTERISTICS OF MESOSCOPIC SEMICONDUCTING JUNCTIONS

被引：0
作者：
LARKIN, AI
MATVEYEV, KA
机构：
来源：
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1987年 / 93卷 / 03期
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O4 [物理学];
学科分类号：
0702 ;
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页码：1030 / 1038
页数：9
相关论文
共 11 条
[1]  
ASLAMAZOV LG, 1982, ZH EKSP TEOR FIZ+, V83, P1170
[2]   FLUCTUATIONS IN THE TEMPERATURE-DEPENDENCE OF THE RESISTANCE OF A ONE-DIMENSIONAL SYSTEM [J].
DIVINCENZO, DP ;
AZBEL, MY .
PHYSICAL REVIEW LETTERS, 1983, 50 (26) :2102-2105
[3]   OBSERVATION OF RESONANT TUNNELING IN SILICON INVERSION-LAYERS [J].
FOWLER, AB ;
TIMP, GL ;
WAINER, JJ ;
WEBB, RA .
PHYSICAL REVIEW LETTERS, 1986, 57 (01) :138-141
[4]  
IMRY Y, 1986, WORLD SC SERIES COND, V1, P101
[5]  
LARKIN AI, 1986, ZH EKSP TEOR FIZ+, V91, P1815
[6]  
LIFSHITZ IM, 1979, ZH EKSP TEOR FIZ+, V77, P989
[7]  
ORLOV AO, 1986, PISMA ESKP TEOR FIZ, V43, P421
[8]  
ORLOV AO, 1986, PISMA ESKP TEOR FIZ, V44, P34
[9]  
Raikh M. E., 1986, PISMA ESKP TEOR FIZ, V43, P437
[10]   EFFECT OF INELASTIC PROCESSES ON RESONANT TUNNELING IN ONE DIMENSION [J].
STONE, AD ;
LEE, PA .
PHYSICAL REVIEW LETTERS, 1985, 54 (11) :1196-1199
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