SOME PROPERTIES OF VAPOR DEPOSITED SIC

被引:16
作者
BEAN, KE
GLEIM, PS
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D O I
10.1149/1.2426437
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1158 / &
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[2]  
BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265
[3]   SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].
BEAN, KE ;
GLEIM, PS ;
YEAKLEY, RL ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&
[4]  
BRADSHAW WG, 1958, LMSD2466
[5]  
BROWN ARG, 1960, SILICON CARBIDE REVI
[6]   EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J].
CAMPBELL, RB ;
CHU, TL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :825-&
[7]  
CARAS GJ, 1965, RSIC381 REDST SCIENT
[8]  
DONOVAN RP, 1965, 4 P ANN MICR S, pA4
[9]   TEMPERATURE CHARACTERISTICS OF VACUUM DEPOSITED DIELECTRIC FILMS [J].
FELDMAN, C ;
HACSKAYLO, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (12) :1459-&
[10]  
HOLTER MR, 1962, FUNDAMENTALS INFRARE, P148