MOLECULAR-BEAM EPITAXIAL-GROWTH OF SINGLE-CRYSTAL AL FILMS ON GAAS (110)

被引:34
作者
PRINZ, GA [1 ]
FERRARI, JM [1 ]
GOLDENBERG, M [1 ]
机构
[1] SACHS FREEMAN ASSOCIATES,BOWIE,MD 20715
关键词
D O I
10.1063/1.93020
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:155 / 157
页数:3
相关论文
共 5 条
[1]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[2]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]   SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].
CHO, AY ;
DERNIER, PD .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332
[4]   STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE [J].
IHM, J ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1981, 47 (09) :679-682
[5]   MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS [J].
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 23 (04) :201-203