DIFFUSION OF IODINE INTO CDTE AT ROOM-TEMPERATURE

被引:3
|
作者
MALZBENDER, J [1 ]
JONES, ED [1 ]
SHAW, N [1 ]
MULLIN, JB [1 ]
机构
[1] ROYAL SIGNALS & RADAR ESTAB, DIV DRA ELECTR, MALVERN WR14 3PS, WORCS, ENGLAND
来源
关键词
CDTE; IODINE DOPING; DIFFUSION;
D O I
10.1002/amo.860050304
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Studies on the diffusion of iodine into CdTe at a temperature of 20 degrees C using four widely differing types of diffusion sources are compared and discussed. The concentration profiles were measured using either a radiotracer sectioning (RTS) technique or secondary ion mass spectrometry (SIMS). The profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave accurate fits, providing four empirical values of the diffusivity, The diffusivities for the fastest component in all four cases were in agreement (similar to 2 x 10(-14) cm(2) s(-1)) and were consistent with previously published data. These results indicate that when iodine is diffused from the vapour It is not a suitable long-term-stable dopant in devices where sharp junctions are required.
引用
收藏
页码:157 / 161
页数:5
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