ELECTRON TRAPPING CHARACTERIZATION BY AUGER-ELECTRON SPECTROSCOPY IN SILICON OXYNITRIDE THIN-FILM

The study of the kinetics of Auger peak shifts with low doses of electron injection (ΔQ≤10−3C cm−2) in silicon oxynitrides thin films is presented. The nature of these shifts is clearly related with the trapping charge phenomena in the film. The parameters associated with the different traps involved are quantitatively established. Two methods of data acquisition have been developed. The former uses several energy channels in the derivative Auger spectrum (dN /dE) in order to determine each point of the kinetic curve. This method has allowed to measure capture cross sections σ≤5 × 10 −18 cm2. The second method uses only one energy channel for each point in the curve, and reduces the acquisition time up to a factor of 50, measuring faster cross sections σ≤8X10−17 cm2. The numerical values of a agree satisfactorily with those obtained by conventional C-V injection measurements, as well as the trap densities obtained at 1 kV of primary energy. The discrepancy for the values of N obtained at higher primary energies is explained in terms of thermalization processes into the oxide. Finally, the possibilities and limitations of both methods are discussed. © 1990, American Vacuum Society. All rights reserved.