HIGH-GAIN, HIGH-SPEED INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION

被引：22
|
作者：
WILLEN, B [1 ]
WESTERGREN, U [1 ]
ASONEN, H [1 ]
机构：
[1] TAMPERE UNIV TECHNOL,DEPT PHYS,TAMPERE,FINLAND
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期
关键词：
D O I：
10.1109/55.468273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve bath a high de current gain and a high maximum frequency of oscillation, We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT's) with cutoff frequencies f(T) and f(max) Of 92 and 95 GHz, respectively, with a de current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz.
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页码：479 / 481
页数：3
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