INP METAL-INSULATED-SEMICONDUCTOR SCHOTTKY CONTACTS USING SURFACE OXIDE LAYERS PREPARED WITH BROMINE WATER

被引：33

作者：

KAMIMURA, K ^{[1
]}

SUZUKI, T ^{[1
]}

KUNIOKA, A ^{[1
]}

机构：

[1] AOYAMA GAKUIN UNIV,DEPT ELECT ENGN & ELECT,SETAGAYA KU,TOKYO 157,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4905 / 4907

页数：3

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