EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES

被引:105
|
作者
GROVES, WO
HERZOG, AH
CRAFORD, MG
机构
关键词
D O I
10.1063/1.1653876
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:184 / &
相关论文
共 50 条
  • [1] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
    NUESE, CJ
    TIETJEN, JJ
    GANNON, JJ
    GOSSENBERGER, HF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +
  • [2] EFFECT OF NEUTRON-IRRADIATION ON GAAS1-XPX ELECTROLUMINESCENT DIODES
    EPSTEIN, AS
    SHARE, S
    POLIMADEI, RA
    HERZOG, AH
    APPLIED PHYSICS LETTERS, 1973, 23 (08) : 472 - 474
  • [3] A MULTI-WAFER GROWTH SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS AND GAAS 1-XPX
    BURD, JW
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1969, 245 (03): : 571 - &
  • [4] EFFICIENCY OF GASS1-XPX ELECTROLUMINESCENT DIODES
    MARUSKA, HP
    PANKOVE, JI
    SOLID-STATE ELECTRONICS, 1967, 10 (09) : 917 - &
  • [5] HIGH-SPEED MICROWAVE SWITCHING UTILIZING BULK GAAS 1-XPX
    IMMORLIC.AA
    PEARSON, GL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 298 - 299
  • [6] EPITAXIAL-GROWTH AND CHARACTERIZATION OF PYROLYTIC-GROWN GAAS1-XPX FOR ELECTROLUMINESCENT DIODES
    SAITOH, T
    MINAGAWA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 656 - 659
  • [7] Characteristics of InGaAs quantum dots grown on tensile-strained GaAs 1-xPx
    Kim, N.H.
    Ramamurthy, P.
    Mawst, L.J.
    Kuech, T.F.
    Modak, P.
    Goodnough, T.J.
    Forbes, D.V.
    Kanskar, M.
    Journal of Applied Physics, 2005, 97 (09):
  • [8] EFFICIENCY DEGRADATION OF GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION
    NUESE, CJ
    SCHADE, H
    HERRICK, D
    METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 587 - +
  • [9] DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION
    SCHADE, H
    NUESE, CJ
    HERRICK, D
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3783 - &
  • [10] THEORY OF EFFECT OF STRAIN ON GAAS ELECTROLUMINESCENT DIODES
    EMTAGE, PR
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1408 - &