OXIDATION BEHAVIOR OF SILICON CARBIDE

被引：163

作者：

ERVIN, G

机构：

来源：

关键词：

D O I：

10.1111/j.1151-2916.1958.tb12932.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：347 / 352

页数：6

共 12 条

[1]

BALLARD AH, 1932, T ELECTROCHEM SOC, V61, P233

[2]

DallaValle JM, 1943, MICROMERITICS TECHNO

[3]

ELMER TH, 1951, NEPA1770 DIV REP

[4]

ELMER TH, 1951, NEPA1768 DIV REP

[5] The surface structure of silicon carbide. [J].

Finch, GI ;

Wilman, H .

TRANSACTIONS OF THE FARADAY SOCIETY, 1937, 33 (01) :0337-0339

[6]

HEINE HG, 1940, HPA, V13, P489

[7]

HUMPHREY GL, 1952, 4888 US BUR MIN REPT

[8]

Lea A.C., 1941, BRIT CERAM T, V40, P93

[9]

LEA AC, 1949, J SOC GLASS TECH, V33, pT27

[10] DESIGN OF A HIGH-TEMPERATURE RESISTANCE FURNACE [J].

MCRITCHIE, FH ;

AULT, NN .