TUNNELING INVESTIGATIONS ON V3SI

被引：11
作者：
SCHUMANN, J
ELEFANT, D
机构：
[1] Zentralinstitut Für Festkörperphysik Und Werkstofforschung, Akademie Der Wissenschaften Der Ddr
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 95卷 / 01期
关键词：
D O I：
10.1002/pssb.2220950110
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
On bulk single phase V3Si single crystals (residual resistivity ratio ϱ(293 K)/ϱ(17.5 K) = 15 to 30) tunnel junctions are prepared by different preparation methods. The tunnel characteristics obtained by means of modulation technique yield energy gap values in the range of δo = (1.93 to 2.66) meV on a lot of different tunnel junctions. The relation 2δo/kTc > 3.52 found on some junctions indicates strong electron‐phonon interaction. Above the energy gap phonon induced structures are found in some tunneling characteristics. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码：91 / 97
页数：7
相关论文
共 30 条
123