NOVEL HALL-EFFECT SPECTROSCOPY OF IMPURITY LEVELS IN SEMICONDUCTORS

A new spectroscopic method, based on the second derivative of the carrier concentrations vs temperature, is proposed for analyzing van der Pauw-Hall-effect experiments. The validity and merits of the method are illustrated by applying it to simulated Hall-effect data in silicon containing one or several impurities with different levels of concentrations and energies of activation. The new technique is more reliable than the conventional Arrhenius plot and offers a higher resolution than previous spectroscopic techniques. It allows identifying low-level impurities, distinguishing between dopants closely spaced in energy and investigating the decrease of activation energies at high carrier concentrations. The ranges of application and measurement precautions are discussed and experimental results in thin silicon-on-insulator films are presented. © 1990.