NATURAL AND FORCED-CONVECTION OF MOLTEN SILICON DURING CZOCHRALSKI SINGLE-CRYSTAL GROWTH

被引：55

作者：

KAKIMOTO, K

EGUCHI, M

WATANABE, H

HIBIYA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 02期

关键词：

D O I：

10.1016/0022-0248(89)90016-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：412 / 420

页数：9

共 11 条

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EGUCHI, M ;

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[8] 3-DIMENSIONAL SIMULATIONS OF THE CZOCHRALSKI BULK FLOW IN A STATIONARY TRANSVERSE FIELD AND IN A VERTICAL MAGNETIC-FIELD - EFFECTS ON THE ASYMMETRY OF THE FLOW AND TEMPERATURE DISTRIBUTION IN THE SI MELT [J].

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