GROWTH AND PROPERTIES OF INASP ALLOYS PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：19

作者：

HUANG, KH ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(88)90040-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：547 / 552

页数：6

共 8 条

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[5] INASXP1-X/INP PHOTODIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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[6] THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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[7] GROWTH OF BRIGHT (300 K) LUMINESCENCE INASXP1-X(LAMBDA=1.7-2.1-MU) ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2901-2903

[8] HETEROEPITAXIAL GROWTH OF HIGH MOBILITY INASP FROM THE VAPOR-PHASE [J].

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