TRANSVERSE DIFFUSION IN PLANAR TRANSISTORS

[1] EFFECTS OF BASE GEOMETRY ON VOLUME RECOMBINATION IN TRANSISTOR BASE AND ON TRANSISTOR CURRENT GAIN FACTOR [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) : 177 - 197

[2] CURRENT GAIN ENHANCEMENT IN LATERAL P-N-P TRANSISTORS BY AN OPTIMIZED GAP IN N+ BURIED LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 205 - 214

[3] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[4] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[5] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[6] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[7] CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 772 - 778

[8] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27

[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[10] TANENBAUM M, 1956, AT&T TECH J, V35, P1

[1] EFFECTS OF BASE GEOMETRY ON VOLUME RECOMBINATION IN TRANSISTOR BASE AND ON TRANSISTOR CURRENT GAIN FACTOR [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) : 177 - 197

[2] CURRENT GAIN ENHANCEMENT IN LATERAL P-N-P TRANSISTORS BY AN OPTIMIZED GAP IN N+ BURIED LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 205 - 214

[3] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[4] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[5] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136

[6] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[7] CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 772 - 778

[8] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27

[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[10] TANENBAUM M, 1956, AT&T TECH J, V35, P1