GROWTH-KINETICS OF CAF2/SI(111) HETEROEPITAXY - AN X-RAY PHOTOELECTRON DIFFRACTION STUDY

被引:56
作者
DENLINGER, JD
ROTENBERG, E
HESSINGER, U
LESKOVAR, M
OLMSTEAD, MA
机构
[1] UNIV WASHINGTON,DEPT PHYS,FM-15,SEATTLE,WA 98195
[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 08期
关键词
D O I
10.1103/PhysRevB.51.5352
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Kinetic variations of the initial stages of CaF2 growth on Si(111) by molecular-beam epitaxy are studied with the in situ combination of x-ray photoelectron spectroscopy and diffraction. After the formation of a chemically reacted interface layer, the morphology of the subsequent bulk layers is found to be dependent on the substrate temperature and incident flux rate, as well as the initial interface structure. For substrate temperatures above 600°C, subsequent layers do not easily wet the interface layer, and a transition is observed from a three-dimensional island formation at low flux to a laminar growth following the coalescence of bilayer islands at higher flux. At lower substrate temperatures (450°C), a different stoichiometry and structure of the interface layer leads to laminar growth at all fluxes, but with a different bulk nucleation behavior. Crystalline heteroepitaxy is not observed when growth initiates at room temperature, but homoepitaxy does proceed at room temperature if the first few layers are deposited at a high temperature. The different growth regimes are discussed in terms of a kinetic model separating step and terrace nucleation where, contrary to homoepitaxy, step nucleation leads to islanded growth. © 1995 The American Physical Society.
引用
收藏
页码:5352 / 5365
页数:14
相关论文
共 46 条
[1]   EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J].
ASANO, T ;
ISHIWARA, H .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :517-519
[2]   HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES [J].
ASANO, T ;
ISHIWARA, H ;
KAIFU, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1474-1481
[3]   SCANNING TUNNELING MICROSCOPY OF INSULATORS - CAF2 EPITAXY ON SI(111) [J].
AVOURIS, P ;
WOLKOW, R .
APPLIED PHYSICS LETTERS, 1989, 55 (11) :1074-1076
[4]   ELECTRON ATTENUATION LENGTHS IN ALKALI-HALIDES [J].
BATTYE, FL ;
LIESEGANG, J ;
LECKEY, RCG ;
JENKIN, JG .
PHYSICAL REVIEW B, 1976, 13 (06) :2646-2652
[5]   EPITAXIAL FILM CRYSTALLOGRAPHY BY HIGH-ENERGY AUGER AND X-RAY PHOTOELECTRON DIFFRACTION [J].
CHAMBERS, SA .
ADVANCES IN PHYSICS, 1991, 40 (04) :357-415
[6]   ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN CAF2 ON SI(111) [J].
CHO, CC ;
KIM, TS ;
GNADE, BE ;
LIU, HY ;
NISHIOKA, Y .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :338-340
[7]   EPITAXIAL RELATIONS AND ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN CAF2 ON SI(111) [J].
CHO, CC ;
LIU, HY ;
GNADE, BE ;
KIM, TS ;
NISHIOKA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :769-774
[8]   SPHERICAL-WAVE CORRECTIONS IN PHOTOELECTRON DIFFRACTION [J].
DELEON, JM ;
REHR, JJ ;
NATOLI, CR ;
FADLEY, CS ;
OSTERWALDER, J .
PHYSICAL REVIEW B, 1989, 39 (09) :5632-5639
[9]   VARIABLE GROWTH MODES OF CAF2 ON SI(111) DETERMINED BY X-RAY PHOTOELECTRON DIFFRACTION [J].
DENLINGER, JD ;
ROTENBERG, E ;
HESSINGER, U ;
LESKOVAR, M ;
OLMSTEAD, MA .
APPLIED PHYSICS LETTERS, 1993, 62 (17) :2057-2059
[10]  
DENLINGER JD, 1993, MATER RES SOC SYMP P, V312, P207, DOI 10.1557/PROC-312-207