A NOVEL DOUBLE-METAL STRUCTURE FOR VOLTAGE-PROGRAMMABLE LINKS

被引：23
作者：
COHEN, SS
RAFFEL, JI
WYATT, PW
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期
关键词：
D O I：
10.1109/55.192804
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGA's) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This metal-insulator-metal (MIM) structure has displayed characteristics desirable for use in the emerging FPGA technology.
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页码：488 / 490
页数：3
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