INTERACTION OF MOLECULAR OXYGEN WITH Si(001) SURFACE COVERED WITH A CHROMIUM OR TITANIUM MONOLAYER

被引：2

作者：

Koval, I. P. ^{[1
]}

Len, Yu. A. ^{[1
]}

Nakhodkin, M. G. ^{[1
]}

Svishevs'kyi, M. O. ^{[1
]}

Yakovenko, M. Yu. ^{[1
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Fac Radiophys Elect & Comp Syst, 4G,Academician Glushkov Ave, UA-03022 Kiev, Ukraine

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2015年 / 60卷 / 01期

关键词：

oxidation; chromium; titanium; silicon;

D O I：

10.15407/ujpe60.01.0046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of experimental researches concerning the initial stages of the interaction between the Si(001) surface covered with a chromium or titanium monolayer and molecular oxygen at exposures to 10(7) L (Langmuir) are reported. On the basis of experimental data, the coefficient of molecular oxygen sticking is calculated. It is shown that not only silicon but also titanium oxides are formed on the Si(001) surface covered with a titanium monolayer. The researches are carried out, by using the Auger electron spectroscopy method.

引用

页码：46 / 51

页数：6

共 10 条

[1] Passive and active oxidation of Si(100) by atomic oxygen: A theoretical study of possible reaction mechanisms [J].