ELECTROMIGRATION EFFECT ON LOW-FREQUENCY NOISE IN AL THIN-FILMS

被引：3
作者：
LIOU, DM
GONG, J
CHEN, CC
机构：
[1] Dept of Electrical Engineering, National TsingHua University, Hsinchu
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词：
ELECTROMIGRATION; 1/F NOISE; 1/F2; NOISE; AL THIN FILM; CURRENT REVERSAL;
D O I：
10.1143/JJAP.30.708
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The change in the noise spectrum was used to characterized the electromigration damage of aluminum thin-film resistors. The 1/f2 noise spectrum was observed in the artificially stressed samples when the measurement current was flowing in the same direction as the stress current. However, when the same amount of measurement current flowed into the same sample from the other end, the sample showed a 1/f noise spectrum. The scanning electron microscope was used to analyze the damaged portion of the sample.
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页码：708 / 710
页数：3
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