TRANSIENT-BEHAVIOR OF BORON-DIFFUSION COEFFICIENT IN SILICON IN OXIDIZING AMBIENT AND EXTRINSIC CONDITIONS - INFLUENCE OF POINT-DEFECT RECOMBINATION

被引：2

作者：

TSOUKALAS, D

机构：

[1] Institute of Microelectronics, NCSR 'Democritos', 15310 Aghia Paraskevi, Athens

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.349748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental results that show the variation of the diffusion coefficient of boron in silicon as a function of the oxidation time in extrinsic conditions. A model is then developed that explains quite satisfactorily this experimentally detected dependence. The model assumes that recombination between self-interstitials and vacancies takes place reducing their number and consequently their contribution to the diffusion of boron. Our results show that this method can fit experimental data using only the interstitialcy diffusion component as a parameter. The best fitting is obtained when f(I) equals 0.4.

引用

页码：7309 / 7314

页数：6

共 11 条

[1] BORON-DIFFUSION IN SILICON IN INERT AND OXIDIZING AMBIENT AND EXTRINSIC CONDITIONS
TSOUKALAS, D
CHENEVIER, P
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (02): : 461 - 465
[2] THE EFFECT OF THERMAL-OXIDATION OF SILICON ON BORON-DIFFUSION IN EXTRINSIC CONDITIONS
ISHIKAWA, Y
NAKAMICHI, I
MATSUMOTO, S
NIIMI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09): : 1602 - 1603
[3] POINT-DEFECT RESIDUAL DAMAGE CONSIDERATIONS FOLLOWING PREAMORPHIZATION OF SILICON .2. BORON-DIFFUSION EXPERIMENTS AND MODELING
FAIR, RB
AJMERA, A
ROZGONYI, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C453 - C453
[4] POINT-DEFECT BASED MODELING OF LOW-DOSE SILICON IMPLANT DAMAGE AND OXIDATION EFFECTS ON PHOSPHORUS AND BORON-DIFFUSION IN SILICON
PARK, HY
LAW, ME
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3431 - 3431
[5] On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon
Vanhellemont, J.
Romano-Rodriguez, A.
Applied Physics A: Solids and Surfaces, 1994, 58 (06): : 541 - 549
[6] ON THE INFLUENCE OF EXTRINSIC POINT-DEFECTS ON IRRADIATION-INDUCED POINT-DEFECT DISTRIBUTIONS IN SILICON
VANHELLEMONT, J
ROMANORODRIGUEZ, A
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (06): : 541 - 549
[7] GOLD AND PLATINUM DIFFUSION - THE KEY TO THE UNDERSTANDING OF INTRINSIC POINT-DEFECT BEHAVIOR IN SILICON
ZIMMERMANN, H
RYSSEL, H
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02): : 121 - 134
[8] EFFECT OF POINT-DEFECT REACTIONS ON BEHAVIOR OF BORON AND OXYGEN IN DEGENERATELY DOPED CZOCHRALSKI SILICON
WIJARANAKULA, W
APPLIED PHYSICS LETTERS, 1993, 62 (23) : 2974 - 2976
[9] GENERAL-MODEL FOR INTRINSIC DOPANT DIFFUSION IN SILICON UNDER NONEQUILIBRIUM POINT-DEFECT CONDITIONS
COWERN, NEB
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4484 - 4490
[10] Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon
Chao, HS
Griffin, PB
Plummer, JD
APPLIED PHYSICS LETTERS, 1996, 68 (25) : 3570 - 3572

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