HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE

被引：59
作者：
HIYAMIZU, S
MIMURA, T
FUJII, T
NANB, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期
关键词：
D O I：
10.1063/1.92088
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：805 / 807
页数：3
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