HIGH-RESOLUTION PHOTOEMISSION STUDY OF BAND STRUCTURE OF TELLURIUM

被引：19

作者：

LAUDE, LD

FITTON, B

ANDEREGG, M

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.26.637

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：637 / &

共 20 条

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[3] BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[4] DERIVATIVE MASS SPECTROMETRY
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[5] DOI T, 1970, J PHYS SOC JPN, V28, P36, DOI 10.1143/JPSJ.28.36
[6] DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES BY MEANS OF PHOTOELECTRIC EMISSION
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[7] OPTICAL PROPERTIES OF VACUUM-EVAPORATED SELENIUM AND TELLURIUM
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WILLIAMS, MW
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5527 - &
[8] PSEUDOPOTENTIAL CALCULATIONS ON BAND STRUCTURE OF TE
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PICARD, M
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (21) : 1587 - &
[9] LOCATION OF L1 AND X3 MINIMA IN GAAS AS DETERMINED BY PHOTOEMISSION STUDIES
JAMES, LW
EDEN, RC
MOLL, JL
SPICER, WE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 909 - &
[10] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS
JAMES, LW
MOLL, JL
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