HIGH-RESOLUTION PHOTOEMISSION STUDY OF BAND STRUCTURE OF TELLURIUM

被引：19

作者：

LAUDE, LD

FITTON, B

ANDEREGG, M

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 26卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.26.637

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：637 / &

共 20 条

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[3]

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[5]

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[7] OPTICAL PROPERTIES OF VACUUM-EVAPORATED SELENIUM AND TELLURIUM [J].

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ARAKAWA, ET ;

WILLIAMS, MW .

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[8] PSEUDOPOTENTIAL CALCULATIONS ON BAND STRUCTURE OF TE [J].

HULIN, M ;

PICARD, M .

SOLID STATE COMMUNICATIONS, 1969, 7 (21) :1587-&

[9] LOCATION OF L1 AND X3 MINIMA IN GAAS AS DETERMINED BY PHOTOEMISSION STUDIES [J].

JAMES, LW ;

EDEN, RC ;

MOLL, JL ;

SPICER, WE .

PHYSICAL REVIEW, 1968, 174 (03) :909-&

[10] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J].

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MOLL, JL .

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