ELECTRONIC-PROPERTIES OF THE TWO-DIMENSIONAL SYSTEM AT GAAS-ALXGA1-XASINTERFACES

被引：23

作者：

ABSTREITER, G ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,HOCHFELDMAGNETLAB,F-38042 GRENOBLE,FRANCE

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90481-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：117 / 125

页数：9

共 11 条

[1] INELASTIC LIGHT-SCATTERING FROM A QUASI-2-DIMENSIONAL ELECTRON-SYSTEM IN GAAS-ALXGA1-XAS HETEROJUNCTIONS [J].

ABSTREITER, G ;

PLOOG, K .

PHYSICAL REVIEW LETTERS, 1979, 42 (19) :1308-1311

[2] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[3]

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[5]

BURSTEIN E, 1978, PHYSICS SEMICONDUCTO, P1231

[6]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[7] QUANTUM PROPERTIES OF STRONG ACCUMULATION LAYERS ON ZNO SURFACES [J].

EGER, D ;

MANY, A ;

GOLDSTEIN, Y .

SURFACE SCIENCE, 1976, 58 (01) :18-24

[8] RESONANCE ENHANCEMENT OF RAMAN-SCATTERING BY ELECTRON-GAS EXCITATIONS OF N-GAAS [J].

PINCZUK, A ;

ABSTREITER, G ;

TROMMER, R ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1979, 30 (07) :429-432

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

STORMER, HL ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W ;

STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[10]

TSUI DC, 1979, APPL PHYS LETT JUL

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