OPTICAL REFLECTIVITY AND AMORPHIZATION OF GAAS DURING DECOMPRESSION FROM MEGABAR PRESSURES

被引：30

作者：

VOHRA, YK

XIA, H

RUOFF, AL

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.103795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline GaAs was studied in a diamond anvil cell by optical reflection spectroscopy and energy-dispersive x-ray diffraction to pressures of 115 GPa (1.15 Mbar). Complete amorphization was observed at ambient conditions after decompression from 115 GPa, and, subsequent compression caused crystallization around 27 GPa to an orthorhombic phase. The results are compared with other group IV and III-V semiconductor materials and implantation- amorphized GaAs.

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页码：2666 / 2668

页数：3

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