P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：58

作者：

SUZUKI, T

GOMYO, A

HINO, I

KOBAYASHI, K

KAWATA, S

IIJIMA, S

机构：

[1] NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

[2] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期

关键词：

D O I：

10.1143/JJAP.27.L1549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1549 / L1552

页数：4

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