STATUS OF DEVICE-QUALIFIED GAAS SUBSTRATE TECHNOLOGY FOR GAAS INTEGRATED-CIRCUITS

被引：19
作者：
THOMAS, RN
MCGUIGAN, S
ELDRIDGE, GW
BARRETT, DL
机构：
来源：
PROCEEDINGS OF THE IEEE | 1988年 / 76卷 / 07期
关键词：
D O I：
10.1109/5.7143
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：778 / 791
页数：14
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