REDUCED REVERSE BIAS CURRENT IN AL-GAAS AND IN0.75GA0.25AS-GAAS JUNCTIONS CONTAINING AN INTERFACIAL ARSENIC LAYER

被引：10
作者：
ROSSI, DV [1 ]
FOSSUM, ER [1 ]
PETTIT, GD [1 ]
KIRCHNER, PD [1 ]
WOODALL, JM [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词：
D O I：
10.1116/1.583830
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：982 / 984
页数：3
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