K.P CALCULATION OF EFFECTIVE MASSES IN ZINC-BLENDE SEMICONDUCTORS

被引:45
作者
BOWERS, RL
MAHAN, GD
机构
[1] Institute of Theoretical Science, Department of Physics, University of Oregon, Eugene
来源
PHYSICAL REVIEW | 1969年 / 185卷 / 03期
关键词
D O I
10.1103/PhysRev.185.1073
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The conduction-band and valence-band effective-mass parameters have been calculated for 11 zinc-blende semiconductors. The k•p method is used to calculate these effective masses in the vicinity of k=0. The matrix elements of px are found using pseudowave functions determined by the empirical pseudopotential method. Cohen and Bergstresser's pseudopotential parameters are employed. The calculated conduction-band masses are within 10% of the experimental values. The valence band masses are known experimentally for InSb and GaSb. Thus, our results provide information on the largely unknown valence band masses. We also discuss the errors caused by using pseudowave functions instead of real wave functions. © 1969 The American Physical Society.
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页码:1073 / &
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