THERMAL EMISSION AND CAPTURE RATES OF HOLES AT THE GOLD DONOR LEVEL IN SILICON

被引：6

作者：

LU, LS

NISHIDA, T

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.339031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4773 / 4780

页数：8

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