DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON

被引:194
作者
BERGMAN, K [1 ]
STAVOLA, M [1 ]
PEARTON, SJ [1 ]
LOPATA, J [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 05期
关键词
D O I
10.1103/PhysRevB.37.2770
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2770 / 2773
页数:4
相关论文
共 15 条
[1]  
DAWBER PG, 1969, P PHYS SOC LONDON, V81, P453
[2]   HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J].
DELEO, GG ;
FOWLER, WB .
PHYSICAL REVIEW B, 1985, 31 (10) :6861-6864
[3]   EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS [J].
FANO, U .
PHYSICAL REVIEW, 1961, 124 (06) :1866-&
[4]   HYDROGEN CONCENTRATION AND DISTRIBUTION IN HIGH-PURITY GERMANIUM-CRYSTALS [J].
HANSEN, WL ;
HALLER, EE ;
LUKE, PN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) :738-744
[5]   INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].
JOHNSON, NM ;
HERRING, C ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772
[6]   INFRA-RED ABSORPTION DUE TO LOCALIZED MODES OF VIBRATION OF IMPURITY COMPLEXES IN IONIC AND SEMICONDUCTOR CRYSTALS [J].
NEWMAN, RC .
ADVANCES IN PHYSICS, 1969, 18 (75) :545-&
[7]   SPECTROSCOPIC EVIDENCE FOR THE HYDROGEN PASSIVATION OF ZINC ACCEPTORS IN GALLIUM-ARSENIDE [J].
PAJOT, B ;
JALIL, A ;
CHEVALLIER, J ;
AZOULAY, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) :305-307
[8]  
PAJOT B, IN PRESS PHYS REV B
[9]   NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].
PANKOVE, JI ;
CARLSON, DE ;
BERKEYHEISER, JE ;
WANCE, RO .
PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225
[10]   HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].
PANKOVE, JI ;
ZANZUCCHI, PJ ;
MAGEE, CW ;
LUCOVSKY, G .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423