SILICON-NITRIDE-GALLIUM-ARSENIDE MIS STRUCTURES PRODUCED BY PLASMA ENHANCED DEPOSITION

被引：23

作者：

BAYRAKTAROGLU, B ^{[1
]}

JOHNSON, RL ^{[1
]}

机构：

[1] USAF,AFWAL AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3515 / 3519

页数：5

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