THE MECHANISM OF RADIATION-RESISTANCE OF MGO.NAL2O3 THROUGH THE FORMATION PROCESS OF DEFECT CLUSTERS UNDER IRRADIATION

被引：21

作者：

FUKUMOTO, K ^{[1
]}

KINOSHITA, C ^{[1
]}

MAEDA, S ^{[1
]}

NAKAI, K ^{[1
]}

机构：

[1] EHIME UNIV,DEPT MAT SCI,MATSUYAMA,EHIME 790,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)96226-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The formation process of defect clusters in MgO.nAl2O3 has been studied not only for understanding the mechanism of the nucleation and growth process of defect clusters but also for getting insights into the reason why this material shows radiation resistance. Defect analysis was performed to determine the sequential change of dislocation loops under irradiation with fission neutrons and during concurrent irradiation with ions and electrons. Effective recombinations of interstitials with structural vacancies and large nuclei of stable interstitial loops are possible mechanisms for high radiation-resistance of this material. Furthermore, homogeneous ionizing radiation plays no significant role on the formation process of defect clusters.

引用

页码：252 / 257

页数：6

共 13 条

[1] STRUCTURAL DAMAGE IN MGAL2O4 SPINEL AFTER HIGH-DOSE ELECTRON-IRRADIATION AT ELEVATED-TEMPERATURES [J].