GROWTH OF ALXIN1-XN SINGLE-CRYSTAL FILMS BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

被引：62

作者：

GUO, QX ^{[1
]}

OGAWA, H ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI,AICHI 441,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00464-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of AlxIn1-xN have been grown on sapphire substrates by microwave-excited metalorganic vapor phase epitaxy. At growth temperature of 600 degrees C, single crystal layers of AlxIn1-xN with x up to 0.14 are obtained. The composition of AlxIn1-xN layers can be controlled, dependent on the ratio of the flow rates of the group III metalorganic sources in the vapor phase. The carrier concentration and Hall mobility of the layers are studied as a function of the composition. Optical measurements reveal that in all the layers, a direct band transition is observed, and its fundamental absorption edge varies continuously with composition.

引用

页码：462 / 466

页数：5

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