ETCHING CHARACTERISTICS OF DEFECTS IN THE INGAASP-INP LPE LAYERS

被引：13
作者：
KOTANI, T
KOMIYA, S
NAKAI, S
YAMAOKA, Y
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 10期
关键词：
D O I：
10.1149/1.2129391
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2273 / 2277
页数：5
相关论文
共 40 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]   OBSERVATION OF ETCH PITS PRODUCED IN INP BY NEW ETCHANTS [J].
AKITA, K ;
KUSUNOKI, T ;
KOMIYA, S ;
KOTANI, T .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) :783-787
[3]  
ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48
[4]  
ANTYPAS GA, 1976, I C SER B, V33, P96
[5]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[6]   LOCALIZED PLASTIC-DEFORMATION OF GAP AND GAAS GENERATED BY THERMOCOMPRESSION BONDING [J].
BRANTLEY, WA ;
HARRISON, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1281-1284
[7]   STACKING FAULTS IN VAPOR GROWN SILICON [J].
CHU, TL ;
GAVALER, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :388-393
[8]   PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES [J].
CLARKE, RC ;
ROBERTSON, DS ;
VERE, AW .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) :1349-1354
[9]   LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J].
COLEMAN, JJ ;
HITCHENS, WR ;
HOLONYAK, N ;
LUDOWISE, MJ ;
GROVES, WO ;
KEUNE, DL .
APPLIED PHYSICS LETTERS, 1974, 25 (12) :725-727
[10]   REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES [J].
ETTENBERG, M ;
NUESE, CJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2137-2142
1234