COMPUTER-SIMULATION OF A DUAL GATE GAAS FIELD-EFFECT TRANSISTOR USING THE MONTE-CARLO METHOD

被引：5
|
作者：
MOGLESTUE, C
机构：
来源：
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES | 1979年 / 3卷 / 05期
关键词：
Compendex;
D O I：
10.1049/ij-ssed.1979.0028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：133 / 136
页数：4
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