COMPUTER-SIMULATION OF A DUAL GATE GAAS FIELD-EFFECT TRANSISTOR USING THE MONTE-CARLO METHOD

被引：5

作者：

MOGLESTUE, C

机构：

来源：

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES | 1979年 / 3卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ij-ssed.1979.0028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.

引用

页码：133 / 136

页数：4