NUCLEATION AND GROWTH OF VAPOR-PHASE DEPOSITION ON SOLID-SURFACES

被引：4

作者：

WU, QD

机构：

[1] Department of Radio-Electronics, Peking University, Beijing

来源：

VACUUM | 1990年 / 41卷 / 4-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0042-207X(90)93980-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The technology of thin films fabricated by vapor phase deposition is important in industrial production and scientific research. Surface energy in unit area before and after deposition, function of surface free energies, critical conditions of nucleation, appearance of clusters and ultrafine particles, and growth of these particles are discussed in this paper. It is pointed out that the substrate may be monocrystalline, polycrystalline, or amorphous material, and the functions of surface free energy are widely suitable. These formulas can be used to discuss the mechanism of formation and growth of thin films fabricated by vapor phase deposition. © 1990.

引用

页码：1431 / 1433

页数：3

共 16 条

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Eckertova L., 1977, PHYS THIN FILMS, P72, DOI [10.1007/978-1-4615-7589-4_4, DOI 10.1007/978-1-4615-7589-4_4]

[2]

HIRCH JH, 1963, CONDENSATION EVAPORA

[3] THE EFFECT OF DIMER MOBILITY ON THIN-FILM NUCLEATION KINETICS [J].