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RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON
被引:21
作者
:
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
DAVIES, DE
机构
:
来源
:
CANADIAN JOURNAL OF PHYSICS
|
1969年
/ 47卷
/ 16期
关键词
:
D O I
:
10.1139/p69-221
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:1750 / &
相关论文
共 10 条
[1]
RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
DAVIES, DE
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(07)
: 243
-
&
[2]
CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
EISEN, FH
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 561
-
&
[3]
IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T)
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
ELHOSHY, A
论文数:
0
引用数:
0
h-index:
0
ELHOSHY, A
MANCHESTER, KE
论文数:
0
引用数:
0
h-index:
0
MANCHESTER, KE
VOGEL, FL
论文数:
0
引用数:
0
h-index:
0
VOGEL, FL
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 46
-
+
[4]
KENNEDY DP, 1968, 3 INT C EL ION BEAM
[5]
IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON
KLEINFEL.WJ
论文数:
0
引用数:
0
h-index:
0
KLEINFEL.WJ
JOHNSON, WS
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WS
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 597
-
&
[6]
PROFILES OF HIGH CONDUCTIVITY SHALLOW LAYERS IN SILICON PRODUCED BY BORON ION IMPLANTATION
LARGE, LN
论文数:
0
引用数:
0
h-index:
0
LARGE, LN
HILL, H
论文数:
0
引用数:
0
h-index:
0
HILL, H
BALL, MP
论文数:
0
引用数:
0
h-index:
0
BALL, MP
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1967,
22
(02)
: 153
-
&
[7]
LINHARD J, 1963, KGL DANSKE VIDENSKAB, V33
[8]
RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES
MANCHESTER, KE
论文数:
0
引用数:
0
h-index:
0
MANCHESTER, KE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(06)
: 656
-
+
[9]
SEMICONDUCTOR DOPING BY HIGH ENERGY 1-2.5 MEV ION IMPLANTATION
ROOSILD, S
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
ROOSILD, S
DOLAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
DOLAN, R
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
BUCHANAN, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 307
-
&
[10]
IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS
THOMAS, CO
论文数:
0
引用数:
0
h-index:
0
THOMAS, CO
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
MANZ, RC
论文数:
0
引用数:
0
h-index:
0
MANZ, RC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(11)
: 1055
-
1061
←
1
→
共 10 条
[1]
RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
DAVIES, DE
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(07)
: 243
-
&
[2]
CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
EISEN, FH
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 561
-
&
[3]
IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T)
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
ELHOSHY, A
论文数:
0
引用数:
0
h-index:
0
ELHOSHY, A
MANCHESTER, KE
论文数:
0
引用数:
0
h-index:
0
MANCHESTER, KE
VOGEL, FL
论文数:
0
引用数:
0
h-index:
0
VOGEL, FL
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 46
-
+
[4]
KENNEDY DP, 1968, 3 INT C EL ION BEAM
[5]
IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON
KLEINFEL.WJ
论文数:
0
引用数:
0
h-index:
0
KLEINFEL.WJ
JOHNSON, WS
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WS
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 597
-
&
[6]
PROFILES OF HIGH CONDUCTIVITY SHALLOW LAYERS IN SILICON PRODUCED BY BORON ION IMPLANTATION
LARGE, LN
论文数:
0
引用数:
0
h-index:
0
LARGE, LN
HILL, H
论文数:
0
引用数:
0
h-index:
0
HILL, H
BALL, MP
论文数:
0
引用数:
0
h-index:
0
BALL, MP
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1967,
22
(02)
: 153
-
&
[7]
LINHARD J, 1963, KGL DANSKE VIDENSKAB, V33
[8]
RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES
MANCHESTER, KE
论文数:
0
引用数:
0
h-index:
0
MANCHESTER, KE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(06)
: 656
-
+
[9]
SEMICONDUCTOR DOPING BY HIGH ENERGY 1-2.5 MEV ION IMPLANTATION
ROOSILD, S
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
ROOSILD, S
DOLAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
DOLAN, R
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
Air Force Cambridge Research Laboratories, Office of Aerospace Research, Bedford, Massachusetts
BUCHANAN, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 307
-
&
[10]
IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS
THOMAS, CO
论文数:
0
引用数:
0
h-index:
0
THOMAS, CO
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
MANZ, RC
论文数:
0
引用数:
0
h-index:
0
MANZ, RC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(11)
: 1055
-
1061
←
1
→