RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON

被引：21

作者：

DAVIES, DE

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1969年 / 47卷 / 16期

关键词：

D O I：

10.1139/p69-221

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1750 / &

共 10 条

[1] RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON [J].

DAVIES, DE .

APPLIED PHYSICS LETTERS, 1968, 13 (07) :243-&

[2] CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].

EISEN, FH .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :561-&

[3] IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T) [J].

GIBBONS, JF ;

ELHOSHY, A ;

MANCHESTER, KE ;

VOGEL, FL .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :46-+

[4]

KENNEDY DP, 1968, 3 INT C EL ION BEAM

[5] IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON [J].

KLEINFEL.WJ ;

JOHNSON, WS ;

GIBBONS, JF .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :597-&

[6] PROFILES OF HIGH CONDUCTIVITY SHALLOW LAYERS IN SILICON PRODUCED BY BORON ION IMPLANTATION [J].

LARGE, LN ;

HILL, H ;

BALL, MP .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (02) :153-&

[7]

LINHARD J, 1963, KGL DANSKE VIDENSKAB, V33

[8] RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES [J].

MANCHESTER, KE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :656-+

[9] SEMICONDUCTOR DOPING BY HIGH ENERGY 1-2.5 MEV ION IMPLANTATION [J].

ROOSILD, S ;

DOLAN, R ;

BUCHANAN, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :307-&

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

THOMAS, CO ;

KAHNG, D ;

MANZ, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) :1055-1061

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