FABRICATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS (DHBT) FOR I2L INTEGRATED-CIRCUITS

被引：0
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作者：
BAILBE, JP
CAMPS, T
CAZARRE, A
JAMAI, J
MARTINS, A
MARTY, A
REY, G
TASSELLI, J
VANNEL, JP
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 02期
关键词：
D O I：
10.1051/rphysap:01989002402017100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：171 / 176
页数：6
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