SELF-ALIGNED GERMANIUM MOSFETS USING A NITRIDED NATIVE OXIDE GATE INSULATOR

被引：41
|
作者：
ROSENBERG, JJ
MARTIN, SC
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期
关键词：
D O I：
10.1109/55.20421
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：639 / 640
页数：2
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