SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ON SI/SIO2 SUBSTRATES

被引：0
|
作者：
ITSUMI, K [1 ]
KATO, E [1 ]
机构：
[1] WASEDA UNIV,DEPT MAT SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C477 / C477
页数：1
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