CONDITIONS FOR STABLE GROWTH OF EPITAXIAL GAP LAYERS BY MOLTEN-SALT ELECTRODEPOSITION

被引：10

作者：

DEMATTEI, RC

ELWELL, D

FEIGELSON, RS

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(78)90297-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：545 / 552

页数：8

共 6 条

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ANDRE, JP ;

HALLAIS, J ;

SCHILLER, C .

[2] SYNTHESIS AND EPITAXIAL GROWTH OF GAP BY FUSED SALT ELECTROLYSIS [J].

CUOMO, JJ ;

GAMBINO, RJ .

[3] SYNTHESIS OF GAAS BY MOLTEN-SALT ELECTROLYSIS [J].

DEMATTEI, RC ;

ELWELL, D ;

FEIGELSON, RS .

[4]

ELWELL D, 1967, J CRYSTAL GROWTH, V33, P232

[5] EPITAXIAL-GROWTH OF ZNSE ON GE BY FUSED SALT ELECTROLYSIS [J].

YAMAMOTO, A ;

YAMAGUCHI, M .

[6]

YOCOM PN, 1968, PREPARATION TRANSITI