EFFECT OF MAGNETIC FIELD ON MODE SPECTRUM IN INSB LASER DIODES

[1] CHAKRAVARTI AN, TO BE PUBLISHED

[2] LAX B, 1963, 31 COURS INT SCH PHY

[3] LAX B, 1964, P COURSE QUANTUM ELE, P17

[4] PROPERTIES OF INAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 899 - +

[5] RECOMBINATION EMISSION IN INSB [J]. PHYSICAL REVIEW, 1966, 148 (02): : 873 - &

[6] MOORADIAN A, 1964 S RAD REC SEM P

[7] MOORADIAN A, 1965 S RAD REC SEM P, P39

[8] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &

[9] PHELAN RJ, 1965 P S RAD REC SEM, P47

[10] PHELAN RJ, 1964 S RAD REC SEM P

[1] CHAKRAVARTI AN, TO BE PUBLISHED

[2] LAX B, 1963, 31 COURS INT SCH PHY

[3] LAX B, 1964, P COURSE QUANTUM ELE, P17

[4] PROPERTIES OF INAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 899 - +

[5] RECOMBINATION EMISSION IN INSB [J]. PHYSICAL REVIEW, 1966, 148 (02): : 873 - &

[6] MOORADIAN A, 1964 S RAD REC SEM P

[7] MOORADIAN A, 1965 S RAD REC SEM P, P39

[8] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &

[9] PHELAN RJ, 1965 P S RAD REC SEM, P47

[10] PHELAN RJ, 1964 S RAD REC SEM P